An investigation of the brittle-to-ductile transition (BDT) in silicon has been conducted on essentially dislocation-free silicon test specimens made by photolithography. No pre-cracks or additional dislocation sources were introduced into the samples. Three-point bending tests of the samples reveals a well defined transition from brittle fracture of the specimens to complete yielding near 732 deg C at a crosshed displacement rate of 0.1 mm/min. Limited plasticity is observed below 732 deg C but is insufficient to prevent crack propagation suggesting that yielding is not dislocation mobility limited. Instead the transition may be controlled by the nucleation of a sufficient density of dislocations. Further support comes from the results of experiments conducted at temperatures below 732 deg C in which samples were rapidly pre-loaded within the linearly elastic regime, then immediately retested. This rapid pre-loading results in a lower transition temperature. This would not be expected if dislocation mobility controlled the BDT. Instead, it is believed that the transition only occurs when a sufficient density of dislocations has nucleated within the sample. In these experiments, the pre-loading event may increase the dislocation nucleation rate. The source of the dislocations in these defect free samples is still under investigation.
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