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首页> 外文会议>Topical meeting on advanced semiconductor lasers and their applications >Optical gain claculations for 1.55 #mu# m unipolar intersubband semiconductor lasers
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Optical gain claculations for 1.55 #mu# m unipolar intersubband semiconductor lasers

机译：1.55＃mu＃M单极性三极管和半导体激光器的光学增益计算

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摘要

The veyr considerable progress which has been made in improving the characteristics of unipolar semiconductor lasers has prompted the present authors to undertake work aimed at assessing the expected performance characteristics of intersubband lasers devices indcluding their waveguiding properties [1], and in particular, their anticipated direct current modulation capabilities. In earlier work, use was made of the rate equation model to describe the dynamical properties and direct current modulation capability of intersubband lasers. It was observed [2] that since elemctron lfietimes in intersubband lasers are typically of the same order as the photon lifetime, there is a fine balance between the contributions of the resonance frequency and damping factor in the determination of the maximum modulation frequency in these devices. That work, in particular, indicated that THz modulation bandwidths of intersubband lasers are quite feasible on the basis of the carrier dynamics [3].
机译：在提高单极半导体激光器的特点方面取得了大大进展，促使本作者旨在进行旨在评估疏忽其波动性能的缺口性能的预期性能特征[1]，特别是它们预期的直接电流调制功能。在早期的工作中，使用速率方程模型来描述三通波光激光器的动态特性和直流调制能力。观察到它[2]由于IntersubBand激光器中的elemcrron Lfietips通常与光子寿命相同，因此在谐振频率和阻尼因子的贡献之间存在精细的平衡，在这些设备中确定最大调制频率的贡献。特别地，这一点表明，基于载体动态的基间激光器的THz调制带宽是非常可行的[3]。

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