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Analysis of Pore Sealing Processes and TiN Diffusion Barrier Deposition on a Porous Ultra Low-k Dielectric by Ellipsometric Porosimetry and PALS - (PPT)

机译:通过椭圆形孔隙瘤和PALS - (PPT)多孔超低k电介质孔密封工艺及锡扩散阻挡沉积分析 - (PPT)

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Porosimetry using PALS and DBS are promising supplements to ellipsometric porosimetry for analysis of thin low-k dielectric films: - Depth depending determination of pore sizes and pore size distributions - Depth depending analysis of process effects on the chemical structure of the material. Main advantages: - Sealed layers can be analyzed, which is not possible using EP - Information on both closed and open porosity is obtained. MePS setup at HZDR allows fast spectra recording at improved conditions.
机译:使用PALS和DBS的孔隙素测量是对椭百分子测量孔隙测定法的供应,用于分析薄的低k介电膜: - 深度取决于孔径和孔径分布的测定 - 深度取决于对材料的化学结构的过程效应分析。主要优点: - 可以分析密封层,从而获得了闭合孔隙率的EP - 信息不可能。 HZDR的MEPS设置允许在改进的条件下进行快速谱记录。

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