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首页> 外文会议>Conference on photonics technology into the 21st century: Semiconductors, microstructures, and nanostructures >Optical Gunn effect in n-doped GaAs at mid- and far-IR wavelengths
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Optical Gunn effect in n-doped GaAs at mid- and far-IR wavelengths

机译：在远红外波长的N掺杂GaAs中的光学枪支效应

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In this paper a rigorous quantum mechanical multi-valley model is developed to assess the optical equivalent of the electrical Gunn effect: a laser beam pumps free electrons from the central conduction band valley of n-doped bulk GaAs towards its satellite values. The computational complexities involve a central fully nonparabolic degenerated $Gamma@- valley, an anisotropic L-valley of arbitrary degeneracy, impurity assisted, thermal and hot polar optical phonon assisted intravalley absorption mechanisms, and intervalley phonon assisted equivalent and nonequivalent intervalley absorption mechanisms. The influences of the doping concentrations, electron temperature, optical power density and the equivalent LL-intervalley deformation potential (IDP) on the magnitude and relaxation time of the optical Gunn effect are discussed and compared with experimental results. We found that the optically induced nonlinear absorption and intervalley transfer strongly depend on the equivalent LL-IDP. The large scattering on the available data for LL-IDP leads to large variations in the theoretical estimations. Under optical plasma resonance conditions we find an energy relaxation time in the L-valley of about 0.3 to 2.2 ps, a nonlinear refractive index n$-2$/ of about 2.7 to 3.75 $MUL 10$+$MIN@81$/ cm$+2$//W and e.g. a 10 percent electron transfer of about 1.8 to 3.2 MWcm$+$MIN@2$/.
机译：在本文中，开发了一种严格的量子机械多谷模型，以评估电气枪效应的光学等效物：激光束泵从N掺杂的散装GaAs的中央导通带谷朝向其卫星值泵泵送自由电子。计算复杂性涉及中央完全非对称退化的$伽马@ - 谷，一种任意退化的各向异性L谷，杂质辅助，热和热极光光学声音辅助静脉室内吸收机构，互助的声子辅助等效和非等级别的inchalley吸收机制。讨论了掺杂浓度，电子温度，光功率密度和等效LL-inchalley变形电位（IDP）对光学枪效应的幅度和弛豫时间的影响，并与实验结果进行了比较。我们发现光学诱导的非线性吸收和inchalley转移强烈取决于等效的LL-IDP。 LL-IDP的可用数据上的大散射导致理论估计的大变化。在光学等离子体共振条件下，我们在L-Valley中找到一个大约0.3至2.2 ps的能量松弛时间，非线性折射率n $ -2 $ /约2.7至3.75 $ mul 10 $ + $ min @ 81 $ / cm $ + 2 $ / w，例如10％的电子转移约1.8至3.2 mwcm $ + $ min @ 2 $ /。

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