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首页> 外文会议>International Semiconductor Device Research Symposium >Investigation of strain relaxation in patterned strained silicon-on-insulator structures by Raman spectroscopy and computer simulation
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Investigation of strain relaxation in patterned strained silicon-on-insulator structures by Raman spectroscopy and computer simulation

机译：拉曼光谱和计算机仿真对图案紧张硅镶嵌结构中应变松弛的研究

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It is well established that the strain in sSOI wafers can be maintained during the high temperature processing steps required by CMOS technology if suitable precautions are taken during patterning of the sSOI wafer into device islands [1]. Routinely a rigid capping layer, such as SiO2 is used to reduce strain relaxation caused by cutting the strained film into small islands. Here, we study the simplest but scientifically relevant case, where in the absence of capping layers or any other precautions, strain relaxation by film patterning and high temperature annealing can be observed. The thermal stability of bi-axial strain is maintained solely by a non-epitaxial bonded interface with the amorphous buried oxide in sSOI after patterning and subsequent high temperature annealing.
机译：很好地确定，如果在将SSOI晶片的图案化到器件岛中，在CMOS技术的高温处理步骤中，可以在CMOS技术所需的高温处理步骤期间保持SSOI晶片的菌株。常规是一种刚性封盖层，例如SiO 2 ，用于减少通过将应变薄膜切成小岛而引起的应变松弛。在这里，我们研究了最简单但科学相关的情况，在没有覆盖层或任何其他注意事项的情况下，可以观察到通过薄膜图案化和高温退火的应变弛豫。在图案化和随后的高温退火后，通过与SSOI中的无定形掩埋氧化物的非外立粘合界面保持双轴菌株的热稳定性。

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