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首页> 外文会议>International Conference on Advanced Materials Processing Technologies >INFLUENCE OF TCO DRY ETCHING ON THE PROPERTIES OF AMORPHOUS-SILICON SOLAR CELLS
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INFLUENCE OF TCO DRY ETCHING ON THE PROPERTIES OF AMORPHOUS-SILICON SOLAR CELLS

机译：TCO干法蚀刻对非晶硅太阳能电池性能的影响

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The transparent conductive oxide (TCO) plays an important role in the performance of amorphous-silicon solar cells. Three types of TCO are widely used at laboratory scale (SnO{sub}2, ITO and ZnO:Al), but industrial amorphous-silicon modules are almost always made using SnO{sub}2, owing to their lower cost. The present paper describes some investigations on the influence of TCO on device shunt resistance and proposes a simple method to prevent potential short circuits caused by unwanted peaks on the surface of SnO{sub}2. A number of cells have been made with the structure SnO{sub}2/p-i-n/Al. Only 15% of these devices have shown shunt resistances above 1 MOhm cm{sup}2. Atomicforce microscopy (AFM) of the SnO{sub}2 surface has revealed the presence of some spikes higher than 500 nm (the overall thickness of the amorphous-silicon layers), which have been considered potentially responsible for short circuits. With this hypothesis, a procedure has been devised, aimed at eliminating such irregularities inside the reactor chamber before growing the amorphous-silicon layers. After cleaning and drying the substrates, they are put in the PECVD chamber and subject to a CF{sub}4 plasma. Immediately the three amorphous-silicon layers are deposited and the cell is completed. The proportion of cells having a shunt resistance above 1 MOhm cm{sup}2 has gone up to 60% using this approach. Independent tests have confirmed that the optical properties of the SnO{sub}2:F are not negatively affected by this dry-etching process.
机译：透明导电氧化物（TCO）在非晶硅太阳能电池的性能中起着重要作用。三种类型的TCO广泛应用于实验室规模（SNO {Sub} 2，ITO和ZnO：Al），但工业的无定形硅模块几乎总是使用SnO {Sub} 2来制造，因此由于其成本较低。本文介绍了对TCO对器件分流电阻影响的一些研究，并提出了一种简单的方法来防止由SnO {Sub} 2的表面上不需要的峰引起的潜在短路。已经使用结构SnO {Sub} 2 / P-I-N / A1进行了许多细胞。这些装置中的只有15％显示出在1摩尔cm {sup} 2以上的分流电阻。 SnO {Sub} 2表面的AromicForce显微镜（AFM）揭示了高于500nm的一些尖峰（非晶硅层的整体厚度），这被认为是对短路的可能负责。利用这种假设，已经设计了一种程序，旨在在生长非晶硅层之前消除反应器室内的这种不规则性。清洁和干燥基材后，将它们放入PECVD室中并受到CF {Sub} 4等离子体。立即沉积三个无定形硅层并完成细胞。使用该方法的分流抗性高于1莫氏CM {SUP} 2的细胞的比例最多可达60％。独立的测试证实SnO {Sub} 2：F的光学性质对该干蚀刻过程没有负面影响。

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