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首页> 外文会议>Asian Meeting on Electroceramics >Effect of incubation time on deposition behavior-of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyI)Ruthenium
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Effect of incubation time on deposition behavior-of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyI)Ruthenium

机译：MOCVD使用（2,4-二甲基戊二烯基）（乙基环戊二烯酶）钌培养时间对钌膜的沉积行为的影响

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摘要

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER)-O_2 system. Substrates with amorphous top-layer having various Hf/Si ratio, S1O_2 (native oxide)/(00l)Si (SiO_2), HfSiON/SiON/(001)Si (HfSiON) and HfO_2/SiON/(001)Si (HfO_2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210°C to 300 °C revealed that the deposition amount depended on the deposition temperature below 250 °C, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210°C and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.
机译：研究包括通过（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌（DER）-O_2系统制备的Ru膜的金属-RU膜的沉积机理。具有各种HF / Si比的无定形顶层，S1O_2（天然氧化物）/（001）Si（SiO_2），HFSION / SiON /（001）Si（HFO_2 / Sion /（001）Si（HFO_2）的底物，用作基材。沉积温度在固定沉积时间的沉积温度依赖于210℃至300℃的沉积量显示沉积量依赖于低于250℃的沉积温度，而几乎恒定在该温度之上。孵育时间依赖于210℃的基板各自，并且基板表面完全覆盖，较短的孵育时间较小的底物的沉积量。另外，孵育时间较短的膜具有较小的表面粗糙度。

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