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首页> 外文会议>AIChE Annual Meeting >Indirect Templating of Magnetic Nanostructures on Anodic Aluminum Oxide Membranes
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Indirect Templating of Magnetic Nanostructures on Anodic Aluminum Oxide Membranes

机译：磁性纳米结构对阳极铝氧化铝膜的间接模板

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Nanoscale antidots, wires, and tubes have attracted significant scientific attention during recent years due to their novel electrical, magnetic and photonic properties. They are promising subjects for studying novel phenomena, such as quantum confinement, proximity interactions and surface plasmon enhancement effects in confined geometries and have potential applications in nanoscale devices. One versatile and convenient approach to fabricate these nanostructures in a well- controlled manner is using the "template synthesis" technique, in which membrane nanopores are utilized as templates. Nanoporous anodic aluminum oxide (AAO) membranes with pore diameters ranging from 5-400 nm can be prepared with anodization in sulfuric, oxalic and phosphoric acids under various reaction conditions. AAO membranes, with highly ordered straight channels and aspect ratios as high as 2000, can be synthesized through a multi-step anodization process. With electrodeposition, magnetic nanowires such as Ni and Co can be prepared. Magnetic antidot arrays were prepared conveniently by sputter coating on the top surface of an AAO membrane with a 5-15 nm thick layer of permalloy (Fe19Ni81). Magneto-Optical Kerr Effect (MOKE) measurements on the permalloy antidot array showed large enhancement of the switching field compared to nonporous films. Magnetic Force Microscopy (MFM) studies of the magnetic nanowire and antidot arrays will also be discussed.
机译：由于其新颖的电，磁性和光子性能，纳米级的防辐射电线和管道引起了显着的科学关注。它们是用于研究新颖现象的有前途的主题，例如狭窄的几何形状中的量子限制，接近相互作用和表面等离子体增强效果，并在纳米级装置中具有潜在的应用。以良好控制的方式制造这些纳米结构的一种通用和方便的方法是使用“模板合成”技术，其中膜纳米孔用作模板。纳米孔阳极氧化铝（AAO）孔径范围为5-400nm的孔径，可以在各种反应条件下用硫酸阳性，草酸和磷酸的阳极氧化制备。通过多步阳极氧化过程可以合成具有高度有序的直线通道和高度高达2000的宽度偏向的AAO膜。通过电沉积，可以制备磁性纳米线，例如Ni和Co。通过溅射涂层在AaO膜的顶表面上方便地制备磁性测试阵列，其具有5-15nm厚的Percololoy（Fe19Ni81）。与无孔薄膜相比，磁滤器反向器阵列上的磁光kerr效应（仲静电误差显示出开关场的大量增强。还将讨论磁力纳米线和反向阵列的磁力显微镜（MFM）研究。

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