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首页> 外文会议>International Conference on Synchrotron Radiation Instrumentation >Zernike-type phase contrast X-ray microscopy at 4 keV photon energy with 60 nm resolution
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Zernike-type phase contrast X-ray microscopy at 4 keV photon energy with 60 nm resolution

机译：Zernike型相位对比度X射线显微镜，4kev光子能量，具有60nm分辨率

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摘要

X-ray microscopy in the multi-keV photon energy range offers unique possibilities to study thick dense samples with high spatial resolution. When employing a high numerical aperture (N.A.) condenser zone plate sample illumination in combination with a high resolution micro zone plate objective lens, a spatial resolution of currently 60 nm is achieved. Since the absorption becomes smaller with increasing photon energy, phase contrast imaging overcomes the limitation for imaging weakly absorbing structures in amplitude contrast mode. We report here on X-ray microscopy of advanced microelectronic devices imaged in Zernike phase contrast mode. While the amplitude contrast between copper and silicon dioxide in these samples is only 7 %, negative as well as positive phase contrast were demonstrated with a contrast of 40 % and 45 %, respectively.
机译：多keV光子能量范围内的X射线显微镜提供了具有高空间分辨率的厚密致样品的独特可能性。当采用高数孔径（N.A.）冷凝器区板样品照明结合高分辨率微区板物镜，实现了目前60nm的空间分辨率。由于光子能量增加，吸收变小，因此相位对比度成像克服了对幅度造影模式中的弱吸收结构的限制。我们在此报告在Zernike相位对比模式中成像的高级微电子设备的X射线显微镜。虽然这些样品中的铜和二氧化硅之间的幅度对比度仅为7％，但阳性相对对比分别对比度为40％和45％。

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