Recent advances in all-reflective diffraction-limited optical systems designed for extreme ultraviolet (EUV) lithography have pushed numerical aperture (NA) values from 0.1 to 0.3, providing Rayleigh resolutions of 27-nm. Worldwide, several high-NA EUV optics are being deployed to serve in the development of advanced lithographic techniques required for EUV lithography, including the creation and testing of new, high-resolution photoresists. One such system is installed on an undulator beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. Sub-?-accuracy optical testing and alignment techniques, developed for use with the previous generations of EUV lithographic optical systems, are being extended for use at high NA. Considerations for interferometer design and use are discussed.
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