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Design and Performance of Undulator Beamline (BL7U) for in-situ Observation of Synchrotron Radiation Stimulated Etching by STM

机译:用于原位观察Synchrotron辐射刺激蚀刻的起伏梁线(BL7U)的设计与性能

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An undulator beamline (BL7U) equipped with an ultra-high vacuum STM system is constructed at the UVSOR facility to investigate excitation energy dependence in synchrotron radiation (SR) stimulated etching. The SR beam is focused using two cylindrical mirrors on the sample surface just under the STM tip. The sample is cleaned by direct current heating and transferred to the sample holder for the STM measurements. The photon flux density is calculated to be 10~(19) photons (cm~2 sec 100mA)~(–1) within the spot of 0.67 mm (H) × 0.17 mm (V) on the sample surface at the first harmonic tuned to 100 eV. The hydrogen adsorbed Si (111) surfaces were investigated using the STM apparatus before the undulator irradiation experiments were performed.
机译:在UVSOR设施中构建配备有超高真空STM系统的波束线(BL7U),以研究同步辐射(SR)刺激蚀刻的激发能量依赖性。 SR光束在STM尖端下方的样品表面上使用两个圆柱形镜子聚焦。通过直接电流加热清洁样品并将其转移到样品支架上以进行STM测量。光子通量密度计算为在第一个谐波调谐的样品表面上的0.67mm(h)×0.17mm(v)的点内为10〜(19)光子(cm〜2 sec 100ma)〜(-1)到100ev。使用STM装置在进行过滤器照射实验之前研究了氢吸附的Si(111)表面。

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