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Silicon Nanowire Transistor Fabrication by the Self-assembling 'Grow-in-Place' Approach with Mass Manufacturability

机译：硅纳米线晶体管通过自组装“取得的取得”方法，具有质量可制造性

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The use of silicon nanowires (SiNWs) in electronic device applications typically uses a grow-and-place approach requiring SiNW growth, harvesting, positioning, and finally device fabrication. The harvesting and positioning steps provide significant impediments to mass manufacturing. To address these problems, we have introduced a novel nanochannel-guided self-assembling "grow-in-place" approach. This methodology uses a horizontal, permanent nanochannel template to guide vapor-liquid-solid (VLS) nanowire growth, and, combined with core-shell top gate geometry, results in SiNW transistor structures without any harvesting and positioning steps.

机译：在电子设备应用中使用硅纳米线（SINW）通常使用需要SINW生长，收获，定位和最终器件制造的生长和放置方法。收获和定位步骤为大规模制造提供了显着的障碍。为了解决这些问题，我们介绍了一种新颖的纳米通道引导自组装“变得取得的”方法。该方法使用水平，永久纳米槽模板来引导蒸汽 - 液体固体（VLS）纳米线生长，并与核心壳顶部栅极几何形状组合，导致Sinw晶体管结构而没有任何收获和定位步骤。

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《NSTI Nanotechnology Conference and Trade Show》|2007年||共4页
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Yinghui Shan; Stephen J. Fonash;
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正文语种
中图分类特种结构材料;
关键词
Nanowire; Transistor; Grow-in-place; Guiding-nanochannel template; Self-assembling; Mass manufacturability;

机译：纳米线;晶体管;生成;指导纳米通道模板;自组装;批量可制造性;

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专利

1. Self-assembling silicon nanowires f0000or device applications using the nanochannel-guided "Grow-in-Place" approach [J] . Shan Y., Fonash S.J. ACS nano . 2008,第3期

机译：使用纳米通道引导的“原位生长”方法自组装的硅纳米线可用于设备应用
2. From Si source gas directly to positioned, electrically contacted Si nanowires: The self-assembling "grow-in-place" approach [J] . Shan YH, Kalkan AK, Peng CY, Nano letters . 2004,第11期

机译：从硅源气体直接到定位的电接触硅纳米线：自组装“原位生长”方法
3. Fabrication of Silicon Nanowire Field-Effect Transistor Biosensor by CMOS Compatible Top-Down Approach with Descum Process [J] . Young-Soo Sohn, Gil Bum Kang, Yong Tae Kim Sensor Letters: A Journal Dedicated to all Aspects of Sensors in Science, Engineering, and Medicine . 2009,第6期

机译：CMOS兼容自上而下的脱胶工艺制备硅纳米线场效应晶体管生物传感器
4. Silicon Nanowire Transistor Fabrication by the Self-assembling 'Grow-in-Place' Approach with Mass Manufacturability [C] . Yinghui Shan, Stephen J. Fonash Nano Science and Technology Institute(NSTI) Nanotechnology Conference and Trade Show(NSTI Nanotech 2007) vol.1; 20070520-24; Santa Clara,CA(US) . 2007

机译：通过具有可制造性的自组装“就地生长”方法制造硅纳米线晶体管
5. Silicon nanowire growth and transistor fabrication by self-assembling "grow-in-place" approach. [D] . Shan, Yinghui. 2007

机译：通过自组装“原位生长”方法进行硅纳米线生长和晶体管制造。
6. Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach [O] . Cher Ming Tan, Xiangchen Chen -1

机译：静电放电应力作用下的全栅硅纳米线场效应晶体管的退化机理–一种建模方法
7. Fabrication of Silicon Nanowires and Transistors with Silicon Nanowire-Channels [O] . Takahiro KAWASHIMA, Tohru SAITOH, Minoru FUJII 2009

机译：用硅纳米线通道的硅纳米线和晶体管的制造

Silicon Nanowire Transistor Fabrication by the Self-assembling 'Grow-in-Place' Approach with Mass Manufacturability

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