THE EQUIVALENT CIRCUIT OF SPIN-DEPENDANT TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE

机译：双屏障谐振隧穿结构中的旋转依赖传输等效电路

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An equivalent circuit of resonant-tunneling nanostructures taking into account spin-polarized transport of charge carriers is proposed. It is based on the approximation of I-V characteristics and represents spin shifted energy levels in the quantum well.

机译：提出了考虑旋转耦合载流子的旋转偏振传输的谐振隧道纳米结构的等效电路。它基于I-V特性的近似，并且表示量子阱中的旋转偏移能级。

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《International Conference on Physics, Chemistry and Application of Nanostructures》|2009年||共3页
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A. KOROLEV; A. DANILYUK;
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THE EQUIVALENT CIRCUIT OF SPIN-DEPENDANT TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE

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