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首页> 外文会议>Conference on Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems >Carbon nanotube-based non-volatile memory and charge sensors
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Carbon nanotube-based non-volatile memory and charge sensors

机译：基于碳纳米管的非易失性存储器和电荷传感器

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摘要

Beyond 65 nm node, the ultra-narrow channel memory device serves as a possible technology for further scaling. A self-assembled carbon nanotube (CNT) channel with self aligned metal nanocrystals is proposed as an alternative to Si based ultra-narrow channel memory. The device demonstrates large memory window and single-electron sensitivity. The analysis of the transport in the CNT channel using non-equilibrium Green's function (NEGF) formalism confirms single electron sensitivity quantitatively at room temperature. The CNT channel conductance exhibits sensitivity to position of the charge along the channel. The NEGF based analysis is easily extended to the application of CNTFET as a charge sensor. The electrostatics of the CNT-nanocrystal memory was analyzed for transport between nanocrystal and CNT. Despite the nanocrystal being in close proximity of the CNT, it is strongly coupled to the gate electrode electrostatically. This effect is not observed in the planar 2D Si- based nanocrystal memory. It obviates a major trade-off in memory design of scaling the control dielectric to decrease operational voltage, while ensuring low gate leakage and should allow ultra-low voltage operations. Large tunneling current should also enhance write times. Large electric field asymmetry should enable a better write/retention ratio.
机译：超过65nm节点，超窄通道存储器设备用作进一步缩放的可能技术。提出了一种具有自对准金属纳米晶体的自组装碳纳米管（CNT）通道作为基于Si的超窄通道存储器的替代方案。该设备演示了大的内存窗口和单电子灵敏度。使用非平衡绿色功能（NegF）形式的CNT信道中的运输分析在室温下定量地确认单电子灵敏度。 CNT信道电导沿着通道对电荷的位置表现出敏感性。基于NegF的分析很容易扩展到CNTFET作为充电传感器的应用。分析CNT-纳米晶体记忆的静电用于在纳米晶体和CNT之间的运输。尽管纳米晶体密切接近CNT，但它静电地耦合到栅电极。在平面2D基于Si的纳米晶体记忆中未观察到这种效果。它在缩放控制电介质的记忆设计中消除了重大权衡，以降低操作电压，同时确保低栅极泄漏，并且应允许超低电压操作。大型隧道电流也应该增强写入时间。大电场不对称应使得更好的写入/保留比。

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