Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator

机译：通过SiGe / Si-on绝缘体选择性氧化形成的锗量子点晶体管的制造与表征

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A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si_(0.95)Ge_(0.05)/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

机译：提出了一种用于锗（GE）单电子晶体管（设定的）的简单和CMOS兼容的制造方法，其中GE量子点（QDS）通过选择性氧化Si_（0.95）Ge_（0.05）/ Si线来自然形成在绝缘体上的硅上。在室温下通过实验观察到透明库仑阻断振荡，库仑楼梯和负差分电导。 GE集的电流 - 电压特性表明GE QD的添加能量约为130meV，GE QD的直径约为7.7nm，这与透射电子显微镜观察和数值计算吻合良好。

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《Symposium on Amorphous and Nanocrystalline Silicon Science and Technology》|2004年||共6页
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W. M. Liao; S. W. Lin; S. S. Tseng; C. K. Lin; M. T. Kuo; P. W. Li;
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1. Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator [J] . Pei-Wen LI, David M. T. Kuo, Wei-Ming LIAO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第11A期

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4. Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator [C] . W. M. Liao, S. W. Lin, S. S. Tseng, Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) . 2004

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Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator

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