Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator

机译：SiGe /绝缘体上硅选择性氧化形成锗量子点晶体管的制造与表征

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A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si_(0.95)Ge_(0.05)/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

机译：提出了一种简单且兼容CMOS的锗（Ge）单电子晶体管制造方法，该方法通过选择性氧化Si_（0.95）Ge_（0.05）/ Si线自然形成Ge量子点（QD）。在绝缘体上硅衬底上。在室温下通过实验观察到清晰的库仑阻塞振荡，库仑阶梯和负微分电导。 Ge SET的电流-电压特性表明，Ge QD的加能约为130 meV，Ge QD的直径约为7.7 nm，与透射电子显微镜观察和数值计算吻合良好。

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《Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US)》|2004年|P.11-16|共6页
会议地点 San FranciscoCA(US)
作者
W. M. Liao; S. W. Lin; S. S. Tseng; C. K. Lin; M. T. Kuo; P. W. Li;
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Department of Electrical Engineering, National Central University, ChungLi, Taiwan, Republic of China;

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正文语种 eng
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4. Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator [C] . W. M. Liao, S. W. Lin, S. S. Tseng, Symposium on Amorphous and Nanocrystalline Silicon Science and Technology . 2004

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Fabrication and Characterization of a Germanium Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator

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