Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. Ni{sub}16Fe{sub}62Si{sub}8B{sub}14 has a lower saturation magnetization (M{sub}s: 800emu/cm{sup}3) than Co{sub}90Fe{sub}10 and a higher anisotropy constant (K{sub}u: 2,700erg/cm{sup}3) than Ni{sub}80Fe{sub}20. In this study, we investigated that both magnetic switching (H{sub}(sw)) and tunneling magnetoresistance (TMR) ratio of MTJs with the NiFeSiB free layer.
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