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Ultrafast Time-Resolved X-ray Diffraction of Coherent Phonons in Semiconductors

机译:半导体中相干声子的超快时间分辨X射线衍射

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Coherent phonons have been extensively investigated by using optical measurements in various materials such as semimetals, semiconductors, and dielectrics and expected to use for controlling phase transition. Atomic motions in the coherent phonon are indirectly detected by the optical measurements and direct measurement of atomic motions is required to study dynamics of coherent phonons and laser-induced phase transitions. X-ray diffraction is the most suitable technique to measure directly the atomic positions and crystal structures. Recently, ultrafast time-resolved X-ray diffraction using short-pulsed X-rays, which generated by femtoseocnd laser induced plasma, has been performed on the laser-excited semiconductors and atomic motions associated with the acoustic phonon propagation are directly observed as the changes in diffraction angles. Recently, Sokolowski et al. [1] demonstrated that the coherent optical phonon mode of Bi (2.12 THz) can be detected as a modulation in the intensity of femtoseond time-resolved X-ray diffraction. In this paper, we performed the femtosecond time-resolved X-ray diffraction on the 60-fs laser irradiated a CdTe single crystal and detected the coherent longitudinal optical (LO) phonon (5.07 THz) at Brillioun zone center. The coherent LO phonon is also confirmed by using an optical reflectivity measurement.
机译:通过使用各种材料(例如半型,半导体和电介质)使用光学测量并期望用于控制相变的光学测量,已经广泛地研究了相干声子。通过光学测量间接检测相干声子中的原子动作,并且需要直接测量原子动作来研究相干声子和激光诱导的相变的动态。 X射线衍射是直接测量原子位置和晶体结构的最合适的技术。最近,使用由Femtoseocnd激光诱导等离子体产生的短发的X射线衍射已经在激光激发半导体上进行了直接观察到与声学声子传播相关联的原子动作,并且随着变化而进行在衍射角度。最近,Sokolowski等人。 [1]证明了BI(2.12THz)的相干光学声子模式可以被检测为在Femtoseond时间分辨X射线衍射的强度中的调制。在本文中,我们在60-FS激光照射CdTe单晶上执行了飞秒时间分辨的X射线衍射,并在布里芯区中心检测了相干纵向光学(LO)声子(5.07至5.07 ZZ)。还通过使用光学反射率测量来确认相干的LO声子。

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