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首页> 外文会议>Conference on Solar Hydrogen and Nanotechnology >Electrodeposition of arrays of ZnO nanostructures and application to photoelectrochemical devices
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Electrodeposition of arrays of ZnO nanostructures and application to photoelectrochemical devices

机译：ZnO纳米结构阵列的电沉积及其在光电化学器件中的应用

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ZnO nano/microstructures offer the opportunity to design new types of photoelectrochemical devices. Arrays of single crystal ZnO nanowires present very interesting properties to enhance the performance in these devices. A systematic study of the deposition of single crystal ZnO nanowire arrays from the oxygen electroreduction method is reported in order to gain a further insight into the nanowire growth mechanisms and to develop an efficient electrochemical method which allows tailoring the nanowire dimensions. The influence of deposition parameters such as zinc precursor and supporting electrolyte concentrations on the formation of a polycrystalline compact ZnO layer or a ZnO nanowire array, as well as on the dimensions of the single crystal nanowires is analyzed. The effect of the polycrystalline compact ZnO buffer layer on the nanowire nucleation process and therefore on the nanowire diameter and density is also discussed. The results show that electrodeposition is a versatile and cost-effective technique which allows growing ZnO single crystal nanowire arrays with tailored dimensions. The structural and optical properties of electrodeposited nanowire arrays are discussed. ZnO nanowires can be sensitized by the coating of a thin layer of CdSe. The ZnO/CdSe photoanode exhibits excellent photoelectrochemical properties and external quantum efficiency larger than 70 % are observed in ferri/ferrocyanide solutions.
机译：ZnO Nano / MicroStructures提供了设计新型光电化学器件的机会。单晶ZnO纳米线的阵列具有非常有趣的性质，以增强这些装置的性能。报道了从氧气电氧化物方法沉积的沉积单晶ZnO纳米线阵列的系统研究，以进一步了解纳米线生长机制并开发一种有效的电化学方法，该方法允许定制纳米线尺寸。分析了锌前体等沉积参数的影响，并对电解质浓度的形成进行了对多晶致密ZnO层或ZnO纳米线阵列的形成，以及单晶纳米线的尺寸。还讨论了多晶致密ZnO缓冲层对纳米线成核过程的影响，因此讨论了纳米线直径和密度。结果表明，电沉积是一种多功能且经济高效的技术，允许ZnO单晶纳米线阵列具有定制尺寸。讨论了电沉积的纳米线阵列的结构和光学性质。 ZnO纳米线可以通过薄层CDSE涂层敏化。 ZnO / CDSE PhotoNode表现出优异的光电化学性质，并且在Ferri / Ferroyyanide溶液中观察到大于70％的外量子效率。

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