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OHMIC RESISTANCE CONTROL FOR COPPER TARNISHING PROCESS

机译:铜旋光过程的欧姆电阻控制

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The reduction of copper sulfide and copper oxides originated during artificial tarnishing of copper was studied using potentiodynamic potential/current density experiments. Six copper surface treatments were considered: mechanical polishing; indoor exposure for 7 days; chemical etching in 1.6 M nitric acid; chemical etching and heating at 160 deg C; and chemical etching and dipping in a 9 X 10~(-4) M or 0.9 M potassium sulfide (K_2S) solution at 70 deg C. Cuprite (Cu_2O) and chalcocite (Cu_2S) were the main compounds formed. A linear relationship with the square root of the scan rate (v) was obtained by plotting the potentiodynamic potential/current density for the tarnish dissolution processes. A relationship between potential and current density cathodic peaks was not obtained, according to Muller's model, showing a proportionality factor with the dimensions of a resistance.
机译:利用电位电位/电流密度实验研究了在人造铜期间源于铜的硫化铜和铜氧化物的还原。考虑了六种铜表面处理:机械抛光;室内暴露7天; 1.6米硝酸的化学蚀刻;在160℃下的化学蚀刻和加热;在70℃的9×10〜(-4)m或0.9m硫化钾(K_2S)溶液中,化学蚀刻和浸渍在70℃下为70℃。铜矿(Cu_2O)和Chalcocite(Cu_2s)是形成的主要化合物。通过绘制用于杀毒溶解过程的电位动力学电位/电流密度来获得与扫描速率(V)的平方根的线性关系。根据Muller的模型,未获得电位和电流密度阴极峰之间的关系,示出了具有电阻尺寸的比例因子。

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