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Growth Mechanism of Nitrogen Incoporated Carbon Nanotubes with RAP Process

机译：氮气加入碳纳米管利用RAP工艺的生长机理

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The CNTs were synthesized with various growth durations from 10min to 120min bydc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C2H2/NH3 and H2gases was used for CNT growth. As the growth time is increase, the CNTs show the tendencygathering into the center of catalyst pattern due to the van der waals interaction between theCNTs and bonding to each other. In the 80 min growth, the CNTs show that the . 1 pm thickdiamter and up to 35pm length. We investiged these CNTs by the scanning electron micros-copy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy(TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the siliconsubstrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/Cand Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.
机译：用10min至120min BYDC-PLSAM增强的化学气相沉积（DC-PECVD），用各种生长持续时间合成CNT。 C 2 H 2 / NH 3和H 2 Gases的混合物用于CNT生长。随着生长时间增加，CNT由于van der WaaS在彼此之间的相互作用和彼此粘合而显示进入催化剂图案中心的趋势。在80分钟的增长中，CNT表示。下午1点厚德，长达35磅。我们通过扫描电子微观拷贝（SEM），透射电子显微镜（TEM），能量分散X射线光谱（TEM-EDS）和拉曼来研究这些CNT。硅覆盖粘合的CNT来自硅藻土，通过悬挂催化剂金属时，氮气被压印。我们获得的N / CANC Si / C的比例分别为0.25〜0.55,0.74〜1.19。

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