Auger recombination effects on the peak lasing power of InGaN/GaN laser diodes

机译：螺旋螺旋重组对Ingan / GaN激光二极管峰值激光功能的影响

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The inherently large series resistance of GaN-based lasers causes significant self-heating that leads to the well-known power roll-off at high current. We analyze recently reported measurements using advanced numerical laser simulation and investigate the physical mechanisms restricting the maximum lasing power in continuous-wave operation. Contrary to popular opinion, our analysis reveals a strong influence of Auger recombination.

机译：GaN基激光器固有的大型串联电阻导致显着的自加热，导致高电流的众所周知的功率滚动。我们通过先进的数控激光仿真分析了最近报告的测量，并研究了限制连续波操作中最大激光功率的物理机制。与流行意见相反，我们的分析揭示了螺旋钻重组的强烈影响。

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《International Conrference on Numerical Simulation of Optoelectronic Devices》|2017年|247p|共2页
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Joachim Piprek;
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中图分类 TN36-53;
关键词
Radiative recombination; Semiconductor lasers; Power lasers; Temperature measurement; Measurement by laser beam; Heating systems;

机译：辐射重组;半导体激光器;功率激光器;温度测量;通过激光束测量;加热系统;

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专利

1. On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements [J] . Joachim Piprek, Friedhard Roemer, Bernd Witzigmann Applied Physics Letters . 2015,第10期

机译：从InGaN / GaN发光二极管效率下降测量中提取的俄歇复合系数的不确定性
2. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination [J] . Zi-Hui Zhang, Wei Liu, Zhengang Ju, Applied Physics Letters . 2014,第3期

机译：InN / GaN多量子阱发光二极管具有渐变的InN组成，可抑制俄歇复合
3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {2021} Free-Standing GaN Substrates [J] . Yohei Enya, Yusuke Yoshizumi, Takashi Kyono, Applied physics express . 2009,第8期

机译：半极性{2021}自由站立式GaN衬底上基于GaN的激光二极管的531 nm绿激光发射
4. Auger recombination effects on the peak lasing power of InGaN/GaN laser diodes [C] . Joachim Piprek International Conrference on Numerical Simulation of Optoelectronic Devices . 2017

机译：螺旋螺旋重组对Ingan / GaN激光二极管峰值激光功能的影响
5. Auger Recombination Mediation through Strain and Fourier Synthesis with Infrared Diode Lasers [D] . Underwood, K. J. 2020

机译：通过用红外二极管激光器菌株和傅立叶合成螺旋钻重组中介
6. Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading [O] . Le Chang, Yen-Wei Yeh, Sheng Hang, 2020

机译：减少InGaN / GaN微发光二极管疏透缩小量子屏障的替代策略以管理电流展开
7. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination [O] . Zhang Z.-H., Liu W., Ju Z., Tan S.T., Ji Y., Kyaw Z., Zhang X., Wang L., Sun X.W., Demir H.V. 2014

机译：InN / GaN多量子阱发光二极管具有渐变的InN组成，可抑制俄歇复合
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Auger recombination effects on the peak lasing power of InGaN/GaN laser diodes

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