• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>SPIE Conference on Nanobiosystems: Processing, Characterization, and Applications >Investigation of maple-deposited DNA films for graphene-based device applications
【24h】

Investigation of maple-deposited DNA films for graphene-based device applications

机译：基于石墨烯的器件应用的枫叶沉积DNA薄膜的研究

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this study, we investigate a new technique to fabricate DNA-CTMA films with tunable properties. MAPLE is, for the first time, explored to deposit DNA-CTMA dielectric films on top of epitaxially grown graphene on silicon carbide (SiC) substrate. Silicon dioxide (SiO_2) is commonly used as a gate insulator in graphene based field effect transistors (GFETs) in a top gate configuration. The high temperature deposition of SiO_2 on graphene is known to cause damage to the surface of the graphene leading to poor device operation. We propose an alternative gate insulator based on a bio-organic (DNA-CTMA) material processed and deposited at room temperature (RT) using MAPLE. Hall measurements run before and after DNA-CTMA deposition showed no change in the type of conductivity as well as charge carrier mobility.
机译：在这项研究中，我们研究了一种用可调性能制造DNA-CTMA膜的新技术。是第一次探索枫树在外延生长的石墨烯上探讨在碳化硅（SiC）基材上的顶部沉积DNA-CTMA介电膜。二氧化硅（SiO_2）通常用作栅极构造的基于石墨烯的场效应晶体管（GFET）中的栅极绝缘体。已知在石墨烯上的高温沉积在石墨烯上导致石墨烯表面损坏导致装置操作不良。我们提出了一种基于使用槭树（RT）在室温（RT）的生物有机（DNA-CTMA）材料的替代栅极绝缘体。 DNA-CTMA沉积之前和之后的霍尔测量显示没有导电性类型的变化以及电荷载流子迁移率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号