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首页> 外文会议>International symposium on advanced gate stack, source/drain, and channel engineering for Si-based CMOS: New materials, processes, and equipment >Cross-sectional U V-Raman measurement for obtaining two-dimensional channel-stress profile in extremely high-performance pMOSFETs
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Cross-sectional U V-Raman measurement for obtaining two-dimensional channel-stress profile in extremely high-performance pMOSFETs

机译：用于在极高性能PMOSFET中获得二维沟道应力曲线的横截面U V-拉曼测量

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The two-dimensional channel-stress profiles in extremely high performance p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) were evaluated by cross-sectional UV-Raman spectroscopy. We found the channel length dependence; the compressive stress in channel Si induced by compressive stress liner and SiGe embedded in the source and drain regions increased with reducing channel length from 5 μm to 0.5 μm. The compressive stress promoted the electrical properties of the pMOSFET. The effect of high-k and metal gate on the channel stress was investigated by measuring the stress before and after gate stack fabrication. Furthermore, we confirmed the difference in the two-dimensional channel-stress profile between (100) Si and (110) Si. This was achieved by the combination of cleavage and focused ion beam etching.
机译：通过横截面UV拉曼光谱法评估极高的P型金属氧化物 - 半导体场效应晶体管（PMOSFET）中的二维沟道应力分布。我们发现频道长度依赖;通过压缩应力衬垫和漏极区域中的压缩应力衬垫和SiGe诱导的通道Si中的压缩应力增加，沟道长度从5μm达到0.5μm增加。压缩应力促进了PMOSFET的电性质。通过测量栅极堆叠制造前后的应力，研究了高k和金属栅极对沟道应力的影响。此外，我们确认了（100）Si和（110）Si之间的二维沟道应力分布的差异。这是通过切割和聚焦离子束蚀刻的组合来实现的。

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