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首页> 外文会议>International symposium on advanced gate stack, source/drain, and channel engineering for Si-based CMOS: New materials, processes, and equipment >Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance
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Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance

机译：使用电晕充电在薄层电阻监测电晕充电中反转层中迁移率的新型非接触方法

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摘要

A recently proposed noncontact method for mobility measurement in an inversion layer is modified taking advantage of two unique features of corona-voltage metrology; 1. the knowledge of the corona charge placed on dielectric surface and 2. the straightforward determination of the semiconductor space charge potential barrier V_(SB) . These features, not available in MOS measurements simplify determining the inversion charge Q_(inv). Combined with ac-surface photovoltage measurement of the inversion layer sheet resistance R_s, they are a basis for novel simplified approach to mobility measurement. The method is illustrated using SiO_2 and high-k stacked dielectrics on p-Si.
机译：最近提出的反转层中的迁移率测量的迁移率测量方法是利用电晕电压计量的两个独特特征的修改; 1.放置在介电表面的电晕电荷和2.半导体空间充电电位屏障V_（SB）的直接确定。这些功能，在MOS测量中不可用简化确定反转电荷Q_（INV）。结合反转层薄层电阻R_S的交流表面光电电压测量，它们是新型简化迁移率测量方法的基础。使用SiO_2和P-Si上的高k堆叠电介质来说明该方法。

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