Jiangxi Key Laboratory of Surface and Engineering, Jiangxi Science and Technology Normal University, Institute of Modern Physics, Chinese Academy of Sciences

机译：江西科技师范大学地表与工程科重点实验室，中国科学院现代物理研究所

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Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to analyze the annealing behavior of defects and the optimistic effect of cavities to oxygen. It was found that the cavities had strong getting effect to oxygen and captured its neighboring implanted oxygen atom, and enhanced the formation of Si_xO_y compound, thus helped shaping the buried oxide in a well defined region. In addition, it also minished the damage level in lattice. The interface between damage layer and crystalline layer was estimated to be 198 nm below surface of 6H-SiC. The implanted oxygen was pegged in the compressed and serried cavity layer, making the amorphous layer narrower than that of reference samples.

机译：采用拉曼散射光谱，紫外线和可见吸收光谱和Rutherford反向散射光谱法分析缺陷的退火行为和空腔对氧气的乐观作用。发现腔具有强烈对氧气的影响并捕获其相邻的植入氧原子，并增强了Si_xO_y化合物的形成，从而有助于在良好定义的区域中使掩埋氧化物成形。此外，它还削弱了晶格中的损伤水平。损伤层和结晶层之间的界面估计为6h-SiC的表面以下198nm。将植入的氧气在压缩和血清腔层中钉，使非晶层比参考样品更窄。

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《Annual Meeting on Testing and Evaluation of Inorganic Materials》|2011年||共6页
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作者
H. H. Zhang; W. M. Gao; Y. L. Shen; B. S. Li;
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中图分类 TB321-53;
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6H-SiC; Raman; UV; RBS-C;

机译：6h-sic;拉曼;uv;rbs-c;

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Jiangxi Key Laboratory of Surface and Engineering, Jiangxi Science and Technology Normal University, Institute of Modern Physics, Chinese Academy of Sciences

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