Influence of Pulse Duration in Picosecond Laser Ablation of Silicon Nitride Layers

机译：脉冲持续时间在氮化硅层的脉冲持续时间的影响

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Lasers as production tools offer several advantages, which are especially relevant for the production of solar cells. The contact-less and localized nature of the energy deposition allows new processes, such as laser selective emitter doping, laser ablation of dielectric coatings and via drilling for back contact cell concepts. A highly critical factor is the correct selection of laser parameters and thus laser sources in a manner that adapts the laser process to the requirements of the material, the process nature and the solar cell properties. In this paper the influence of the pulse duration in the range from hundreds of femtoseconds to ten picoseconds on the selective ablation of silicon nitride from multi-crytsalline solar cells is investigated. For this process it is critical to avoid damage to the sensitive emitter and ultra-short laser sources have the potential to enable this process.

机译：激光器作为生产工具提供了几个优点，这对于太阳能电池的生产特别相关。能量沉积的接触较少和局部性质允许新的方法，例如激光选择性发射极掺杂，激光烧蚀的介电涂层和钻孔，用于钻孔接触电池概念。一个高度临界因素是正确选择激光参数，从而以适应材料的要求，工艺性质和太阳能电池性能的方式正确选择激光源。在本文中，研究了从数百来自多冻太阳能电池的氮化硅的选择消融的数百毫伏的脉冲持续时间到十几个皮秒。对于此过程，避免敏感发射器损坏和超短激光源的可能性是至关重要的。

著录项

来源
《International Conference on Crystalline Photovoltaics》|2011年||共6页
会议地点
作者
Malte Schulz-Ruhtenberg; Daniel Trusheim; Jo Das;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类太阳能发电;
关键词
laser ablation; silicon nitride; picosecond lasers; ultra-short pulse lasers; multicrystalline solar cells;

机译：激光烧蚀;氮化硅;PicoSecond激光;超短脉冲激光;多晶硅太阳能电池;

相似文献

外文文献
中文文献
专利

1. 卵龄和脉冲持续时间对小鼠卵母细胞电活化效果的影响 [J] . 谭景和, 周琪动物学报 . 1995,第003期
2. On the pulsed laser ablation of polycrystalline cubic boron nitride—Influence of pulse duration and material properties on ablation characteristics [J] . Denkena Berend, Kroedel Alexander, Grove Thilo Journal of Laser Applications . 2019,第2期

机译：多晶立方氮化硼的脉冲激光烧蚀—脉冲持续时间和材料性能对烧蚀特性的影响
3. Selective ablation of thin SiO_2 layers on silicon substrates by femto- and picosecond laser pulses [J] . T. Rublack, S. Hartnauer, P. Kappe, Applied Physics . 2011,第1期

机译：飞秒和皮秒激光脉冲选择性烧蚀硅衬底上的SiO_2薄层
4. Selective ablation of thin SiO₂ layers on silicon substrates by femto- and picosecond laser pulses [J] . T. Rublack, S. Hartnauer, P. Kappe, Applied Physics A: Materials Science & Processing . 2011,第1期

机译：飞秒和皮秒激光脉冲选择性烧蚀硅衬底上的SiO _{2 薄层}
5. Influence of Pulse Duration in Picosecond Laser Ablation of Silicon Nitride Layers [C] . Malte Schulz-Ruhtenberg, Daniel Trusheim, Jo Das International Conference on Crystalline Photovoltaics . 2011

机译：脉冲持续时间在氮化硅层的脉冲持续时间的影响
6. Laser-induced back-ablation of aluminum thin films using picosecond laser pulses. [D] . Bullock, Anthony Burlingame. 1999

机译：使用皮秒激光脉冲对铝薄膜进行激光诱导的反烧蚀。
7. Spectral dynamics of picosecond gain-switched pulses from nitride-based vertical-cavity surface-emitting lasers [O] . Shaoqiang Chen, Takashi Ito, Akifumi Asahara, -1

机译：基于氮化物的垂直腔面发射激光器的皮秒增益切换脉冲的光谱动力学
8. Influence of pulse duration in picosecond laser ablation of silicon nitride layers [O] . Schulz-Ruhtenberg, Malte, Trusheim, Daniel, Das, Jo, 2011

机译：脉冲持续时间对氮化硅层皮秒激光烧蚀的影响
9. Laser-Induced Back-Ablation of Aluminum Thin Films using Picosecond Laser Pulses [R] . Bullock, A. B. 1999

机译：用皮秒激光脉冲激光诱导铝薄膜背面烧蚀

Influence of Pulse Duration in Picosecond Laser Ablation of Silicon Nitride Layers

摘要

著录项

相似文献

相关主题

期刊订阅