A novel SOI lateral bipolar transistor with 30GHz f_max and 27V BV_CEO for RF power amplifier applications

机译：具有30GHz F _{MAX 和27V BV _{CEO 的新型SOI横向双极晶体管，用于RF功率放大器应用}}

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This paper describes a lateral bipolar transistor build on SOI substrate (ie. SOI-LBJT) for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. This concept is validated by fabricated SOI-LBJT, which delivers frequency (f_t/f_max = 12/30GHz) and breakdown voltage (BV_CEO=27 V) that approaches the Johnson's limit. This is the first reported Si-BJT that reaches Johnson's limit with BV_CEO above 10V.

机译：本文介绍了用于RF功率放大器应用的SOI基板（即，SOI-LBJT）上的横向双极晶体管构建。横向设计概念显着降低了寄生电阻和电容，并实现了非常高的工作频率和良好的折衷电压。该概念由制造的SOI-LBJT验证，其提供频率（F _{T / F _{MAX = 12 / 30GHz）和击穿电压（BV _{CEO = 27 v）接近约翰逊的极限。这是第一个报告的SI-BJT，通过BV _{CEO 以上10V地达到了约翰逊的极限。}}}}

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《International Conference on Semantic Technology and Information Retrieval》|2011年||共4页
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I-Shan Michael Sun; Wai Tung Ng; Kanekiyo K.; Kobayashi T.; Mochizuki H.; Toita M.; Furukawa Y.; Imai H.; Ishikawa A.; Tamura S.; Takasuka K.;
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1. A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications [J] . Nii H., Yamada T. IEEE Transactions on Electron Devices . 2000,第7期

机译：薄膜SOI上具有67 GHz f / sub max /的新型横向双极晶体管，用于RF模拟应用
2. Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1W High-Efficiency RF Power Amplifier Applications [J] . Hwann-Kaeo Chiou, Ping-Chun Yeh, Chwan-Ying Lee, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第3A期

机译：适用于1W高效RF功率放大器应用的SiGe异质结双极晶体管晶胞的几何效应
3. Lateral High-Speed Bipolar Transistors on SOI for RF SoC Applications [J] . I-Shan Michael Sun, Wai Tung Ng, Koji Kanekiyo, IEEE Transactions on Electron Devices . 2005,第7期

机译：SOI上的横向高速双极晶体管，用于RF SoC应用
4. A novel SOI lateral bipolar transistor with 30GHz f_max and 27V BV_CEO for RF power amplifier applications [C] . I-Shan Michael Sun, Wai Tung Ng, Kanekiyo K., International Conference on Semantic Technology and Information Retrieval . 2011

机译：具有30GHz F _{MAX 和27V BV _{CEO 的新型SOI横向双极晶体管，用于RF功率放大器应用}}
5. Investigation of gallium indium phosphide/gallium arsenide double heterojunction bipolar transistors for microwave power amplifier applications. [D] . Chen, Pin-Fan. 2001

机译：磷化铟镓/砷化镓双异质结双极晶体管在微波功率放大器应用中的研究。
6. A Single Switcher Combined Series Parallel Hybrid Envelope Tracking Amplifier for Wideband RF Power Amplifier Applications [O] . Nijad Anabtawi, Rony Ferzli, Haidar M. Harmanani -1

机译：单开关组合串联并联混合包络跟踪放大器用于宽带射频功率放大器应用
7. A Low Cost SMT Integrated Frequency Doubler and Power Amplifier for 30GHz DBS Uplink Applications [O] . Monica Bhatnagar, Henrik Morkner 2013

机译：用于30GHz DBs上行链路应用的低成本smT集成倍频器和功率放大器
8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

机译：用于大功率开关应用的siC双极晶体管和GaN异质结双极晶体管的探索性开发。

A novel SOI lateral bipolar transistor with 30GHz fmax and 27V BVCEO for RF power amplifier applications

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A novel SOI lateral bipolar transistor with 30GHz f_max and 27V BV_CEO for RF power amplifier applications