Aluminum doped ZnO_x (ZnO_x:Al) films have been deposited on glass in an in-line industrial type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. ZnO_x:Al films can be grown at very high deposition rates of - 14 nm/s for a substrate speed from 150 mm/min to 500 mm/min. ZnO_x:Al films are highly conductive (R < 9 Ohm/sq, for a film thickness above 1300 nm) and transparent in the visible range (> 80%). Amorphous silicon p-i-n solar cells have been grown on as deposited ZnO_x:Al films, without optimizing the surface texturing of ZnO_x:Al films to enhance light scattering. An initial efficiency of approximately 8% has been achieved.
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