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Preparation and Properties of Si_3N_4 Based Composites for Broad Band Radomes

机译：基于Si_3N_4基于宽带放射线的复合材料的制备与性能

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A new preparation method was developed to produce Si_3N_4-SiO_2-Si_2N_2O composites for broad band radome applications. The three-dimensional cross-linked polyphenylsiloxane (PPS) was used as an organic precursor. The composites obtained through react bonding between Si and the precursor powders in the stream of N_2 were examined. The conversion of the PPS polymer to the ceramic was examined by TG analysis and conventional X-ray diffraction (XRD) techniques. It was found that the ceramics contained a primary Si_2N_2O phase, some β-Si_3N_4 phase and a minor α-SiO_2 phase. Despite low density (1.7-2.0g·cm~(-3)), the flexural strengths of the composites reaches 195Mpa at room temperature. The ceramic has excellent dielectric properties with dielectric constants as low as 3.2-5.5.
机译：开发了一种新的制备方法，用于生产用于宽带檐罩应用的Si_3N_4-SiO_2-Si_2N_2O复合材料。三维交联聚苯硅氧烷（PPS）用作有机前体。检查通过在N_2流中的Si和前体粉末之间反应键合获得的复合材料。通过TG分析和常规X射线衍射（XRD）技术研究了PPS聚合物对陶瓷的转化。发现陶瓷含有初级Si_2N_2O相，一些β-Si_3N_4相和较小的α-SiO_2相。尽管密度低（1.7-2.0g·cm〜（3）），复合材料的弯曲强度在室温下达到195MPa。陶瓷具有优异的介电性能，具有低至3.2-5.5的介电常数。

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