• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议> >Electrical stabilization of diamond MIS interface and MISFETs by ultrahigh-vacuum process
【24h】

Electrical stabilization of diamond MIS interface and MISFETs by ultrahigh-vacuum process

机译：超高真空工艺对钻石MIS接口和MISFET的电稳定性

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In order to obtain electrically stabilized MIS interface, a diamond metal-insulator-semiconductor field-effect transistor (MISFET) was prepared by means of reduced-oxygen process including ultrahigh-vacuum (UHV) process, and its electrical properties were closely investigated. According to the results, observed effective mobility (#mu#_(eff)) was 400 cm~2/Vs at room temperature, which is the highest value obtained until now in the diamond FET at room temeprature. The transconductance (g_m) and surface state density (N_(ss)) of the device operation region was 5mS/mm and approx 10~(10)/cm~2 eV, respectively, which is also comparable with conventional Si MOSFETs with the same gate length (Lg=30#mu#m).
机译：为了获得电稳定的MIS界面，通过包括超高真空（UHV）工艺在内的还原氧工艺制备了金刚石金属-绝缘体-半导体场效应晶体管（MISFET），并对其电性能进行了深入研究。根据该结果，在室温下观察到的有效迁移率（μmu_（eff））为400cm 2 / Vs，这是迄今为止在室温下在金刚石FET中获得的最高值。器件工作区的跨导（g_m）和表面态密度（N_（ss））分别为5mS / mm和大约10〜（10）/ cm〜2 eV，这也与具有相同功能的传统Si MOSFET相当浇口长度（Lg = 30＃mu＃m）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号