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Influence of sputtering power on structure and photocatalyst properties of DC magnetron sputtered TiO2 thin film

机译：溅射功率对DC磁控溅射TiO2薄膜结构和光催化剂性能的影响

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TiO2 thin films were deposited by DC reactive magnetron sputtering technique on silicon wafer and glass slide at sputtering power of 210 W and 230 W. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The distance of Ti-target to substrate holder (d_(s_t)) was 120 mm. The films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The photocatalytic activity was evaluated by the measurement of the decomposition of methylene blue after UV irradiation. It was found that the crystalline structure of TiO2 thin films strongly depended on the sputtering power. The mixed phase of anatas/rutile TiO2 thin films were successfully obtained with the sputtering power of 230 W. While anatase TiO2 thin films were obtained with sputtering power of 210 W. The TiO2 thin film with anatase structure exhibited the best photocatalytic activity.
机译：在硅晶片上的DC反应磁控溅射技术沉积TiO2薄膜，溅射功率为210W和230W的溅射功率。在氩气和氧气的混合物中溅射纯金属钛靶。 Ti-靶对衬底支架的距离（D_（S_T））为120mm。薄膜的特征在于X射线衍射（XRD）和原子力显微镜（AFM）。通过测量UV照射后亚甲基蓝的分解评价光催化活性。发现TiO 2薄膜的晶体结构强烈地依赖于溅射功率。通过230W的溅射功率成功获得Anatas /金红石TiO2薄膜的混合相。当避免溅射功率为210W时获得锐钛矿TiO2薄膜。具有锐钛矿结构的TiO 2薄膜表现出最佳的光催化活性。

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