Effect of different low temperatures on current transport mechanisms and frequency effect on capacitance-voltage curves for MOS-diodes

机译：不同低温对电流输送机制和频率效应对MOS - 二极管电气电压曲线的影响

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Thin SiO2 films with thickness 5-10 nmwere grown at 700 °C in dry ambient. The devices with oxide 5 nm approach ideality case at room temperature, in this case thermoionic emission over the barrier is dominate mechanism with traps was dominate. Capacitance-voltagedata in the form of 1/C~2 verse voltage plot has been used to extract doping on the space charge region. The barrier height from I-V calculated 0.65, 0.64 V for devices with oxide 5, 10 nm respectively, this value difference from values extract from C-V plot which found 0.57, 0.64 V.

机译：厚度为5-10 nmwere的薄SiO2薄膜在干燥环境中在700℃下生长。具有氧化物5nm的器件在室温下接近理想情况，在这种情况下，在屏障上热量排放是带有陷阱的主导机制。在1 / C〜2 Vers电压图的形式中的电容 - 电压数据用于提取空间电荷区域上的掺杂。来自I-V的屏障高度计算0.65,0.64V，对于具有氧化物5,10nm的器件，该值与从发现0.57,0.64V的C-V图的值提取物的该值差异。

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《International Conference on Clean Energy Solutions for Sustainable Environment》|2013年||共5页
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Marwa Abdul Muhsien; Ibrahim R. Agool; A. M. Abaas;
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正文语种
中图分类清洁能源（无污染能源）的研究;
关键词
SiO2; electrical properties; MOS-diodes; thin film;

机译：SiO2;电气特性;MOS-二极管;薄膜;

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4. Effect of different low temperatures on current transport mechanisms and frequency effect on capacitance-voltage curves for MOS-diodes [C] . Marwa Abdul Muhsien, Ibrahim R. Agool, A. M. Abaas International Conference on Clean Energy Solutions for Sustainable Environment . 2013

机译：不同低温对电流输送机制和频率效应对MOS - 二极管电气电压曲线的影响
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7. Effect of Different Low Temperatures on Current Transport Mechanisms and Frequency Effect on Capacitance-voltage Curves for MOS-diodes [O] . Muhsien Marwa Abdul, Agool Ibrahim R., Abaas A.M., 2012

机译：不同低温对MOS二极管电流传输机制的影响及频率对电容-电压曲线的影响

Effect of different low temperatures on current transport mechanisms and frequency effect on capacitance-voltage curves for MOS-diodes

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