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Preparation and Characterization of Electrodeposited Cobalt Nanowires

机译:电沉积钴纳米线的制备与表征

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Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl_2.6H_2O salt solution was used, which was buffered with H_3BO_3 and acidified by dilute H_2SO_4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.
机译:电化学沉积技术已被用于钴纳米线沉积到纳米尺寸的阳极氧化铝(AAO)模板的通道。 CoCl_2.6H_2O盐​​溶液使用时,将其用缓冲H_3BO_3和由稀H_2SO_4酸化,以增加溶液的电镀寿命和控制pH值。铜的薄膜大约150纳米厚的由电子束蒸发系统涂覆AAO模板的一侧充当阴极以创建电接触。 FESEM分析表明,所沉积的纳米线的高度对齐,彼此平行,并与相当高的孔隙提交因子高纵横比。透射电镜结果表明,电钴纳米线在本质上结晶。磁滞回线示出了用于和移出平面配置的磁化特性。中平面饱和磁化(Ms)比,因为易磁化轴的面内配置的下垂直于纳米线轴线。这些磁性纳米线可利用的应用,如自旋电子器件,高密度磁存储器和磁传感器的应用程序。

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