Research of Probability Distribution of Semiconductor Test Parameter

机译：半导体测试参数概率分布的研究

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The probability distribution of electrical characteristic parameters of semiconductor device is an important reference which is used to analyze the reliability and quality consistency of devices. These distributions are considered as normal distribution at home and abroad. This paper utilized mature GaAs MESFET low noise amplifier as analytic sample which is volume production and wide application, and used high-precision Agilent B1505A device analyzer to test main electrical characteristics of 408 samples. After the distribution generation of test results, the Skewness-Kurtosis method was used to analyze probability distributions of the results. At last, the conclusion of distribution of measuring parameter is non-normal distribution was educed.

机译：半导体器件的电特性参数的概率分布是一种重要的参考，用于分析设备的可靠性和质量稠度。这些分布被视为国内外正常分布。本文利用了成熟的GaAs Mesfet低噪声放大器作为分析样本，该样品是批量生产和广泛的应用，并使用高精度安捷伦B1505A器件分析仪来测试408个样品的主要电气特性。在试验结果的分布发生后，使用抗峰度法分析结果的概率分布。最后，在测量参数分布的结论是引发了非正常分布。

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《International Conference on Intelligent System and Applied Material》|2014年||共8页
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作者
Zhang Kui; Zhao Hongdong; Shen Tongxi;
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中图分类 TB3-532;
关键词
Semiconductor; GaAsMESFET; TestParameters; NormalDistribution; Skewness-Kurtosis Test;

机译：半导体;盖斯马斯赛;TestParameters;正规分布;偏静脉病检测;

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Research of Probability Distribution of Semiconductor Test Parameter

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