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Design of low power logic gates by using 32nm and 16nm FinFET technology

机译：使用32nm和16nm FinFET技术设计低功率逻辑门

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摘要

In today's world different technologies are present in case of electronics market. The electronics market grown very rapidly because of most of the devices are compact, innovative, giving more efficiency and consumes less power with very small supply voltage. Because of the advancement in the semiconductor technology, integration of whole electronics system on a single chip is practicable. We have seen the change in the semiconductor technology from personal computer to the laptops and then to the cell phones and thus the mobile and computing markets are continue to innovate at dramatic rate. For all this, the most viable successor is a CMOS technology. But the 22nm node of CMOS fails to perform these operations because the shrinking of this CMOS leads to the short channel effect. Multigate FET technology is the most feasible successor to planar CMOS technology at the 22-nm node and beyond. These multi-gate transistors are called fin field-effect transistors (FinFET). Design of NOR and NAND circuits is present in this paper, to improve the speed and power of these gates. Also in this paper, the comparative study of different performance parameters for CMOS and FinFET technology for basic logic gates is present. Dynamic power, current, static power are some parameters which are evaluated with the help of tanner EDA tool.
机译：在当今世界不同的技术，在电子市场存在不同的技术。由于大多数设备具有紧凑，创新，提供更高的效率，并且使用非常小的电源电压效率，产生更大的效率，并且电源电压较少。由于半导体技术的进步，整合整个电子系统在单个芯片上的积分是切实可图的。我们已经看到从个人计算机到笔记本电脑的半导体技术的变化，然后到手机，因此移动和计算市场继续以戏剧性的速度创新。为此，最可行的继任者是CMOS技术。但是CMO的22nm节点未能执行这些操作，因为该CMO的收缩导致短频道效果。 Comperion FET技术是在22-NM节点和超出22-NM节点上的平面CMOS技术的最可行的继任者。这些多栅极晶体管称为Fin场效应晶体管（FinFET）。本文提供了NOR和NAND电路的设计，提高了这些门的速度和功率。同样在本文中，存在对基本逻辑门的CMOS和FinFET技术不同性能参数的比较研究。动态功率，电流，静态功率是在Tanner EDA工具的帮助下评估的一些参数。

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