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首页> 外文会议>International Conference on Electronic, Mechanical, Information and Management >Study on Surface Texturization of Monocrystalline Silicon Wafers with Na_2CO_3 and NaHCO_3 Solutions
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Study on Surface Texturization of Monocrystalline Silicon Wafers with Na_2CO_3 and NaHCO_3 Solutions

机译：用Na_2CO_3和NaHCO_3溶液研究单晶硅晶片表面纹理化

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The surface texturization of monocrystalline silicon wafers based on a mixture of sodium carbonate (Na_2CO_3) and sodium bicarbonate (NaHCO_3) solutions under different conditions have been studied in this work. A series of comparative experiments were made to indicate the dependence of hemispherical surface reflectivity on the Na_2CO_3 concentration, the NaHCO_3 concentration and the solution temperature. The results showed that the Na_2CO_3 concentration and the solution temperature have great effects on texture. In addition, the pyramid size and the surface average reflectivity decreased with the addition of NaHCO_3. On the basis of our experiments, it is shown that the optimized conditions are 24 wt% Na_2CO_3, 4 wt% NaHCO_3, 90°C and 30 min. Under these conditions, uniform pyramids are fabricated and the textured silicon surface exhibits a lower average reflectivity (about 12.34%) in the main range of solar spectrum (400 nm-800 nm). Because this texturization method is economical, nonhazardous and has low pollution, so we feel that it is an attractive alternative for the industrial production.
机译：在该工作中，研究了基于碳酸钠（Na_2CO_3）和碳酸氢钠（NaHCO_3）溶液的混合物的单晶硅晶片的表面纹理已经在该工作中研究。进行了一系列比较实验，以指示半球形表面反射率对Na_2CO_3浓度，NaHCO_3浓度和溶液温度的依赖性。结果表明，Na_2CO_3浓度和溶液温度对质地具有很大的影响。另外，通过添加NaHCO_3，金字塔尺寸和表面平均反射率降低。在我们的实验的基础上，显示优化的条件是24wt％Na_2CO_3，4wt％NaHCO_3，90℃和30分钟。在这些条件下，制造均匀的金字塔，织地用硅表面在太阳光谱（400nm-800nm）的主要范围内显示出较低的平均反射率（约12.34％）。因为这种纹理化方法是经济的，无危害的并且污染低，因此我们认为它是工业生产的有吸引力的替代品。

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