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首页> 外文会议>Energy Technologies Symposium >Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic
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Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

机译：基于三维晶体可塑性的多结型光伏中的内在应力模型

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Our understanding for intrinsic stresses and defects evolution in photo-voltaic devices has became an essential part of new developments. In particular, Multi-Junction Photovoltaic (MJ-PV) modules depend on multi-layer structures that may suffer high dislocation-densities as a result of high lattice and thermal expansion coefficient mismatch. These defects limit the performance, reliability, and lifetime of PV devices. In the current study, a three-dimensional multiple-slip crystal-plasticity model and specialized finite-element formulations are used to investigate InGaN growth on Si substrates. The formulation is based on accounting for thermal and intrinsic stresses as a result of different processing conditions and microstructures. Furthermore, the formulation was used to investigate a recently developed technique, Embedded Void Approach (EVA), which can be used to address both the high density of defects and the cracking/bowing of InGaN growth on Si. The current work lays the groundwork for more extensive use of silicon in MJ-PV devices.
机译：我们在光生伏打设备的内应力和缺陷演化的认识已成为新的发展的重要组成部分。特别地，多结光伏（MJ-PV）模块依赖于可能遭受高的位错密度高的晶格和热膨胀系数失配的结果的多层结构。这些缺陷限制了性能，可靠性，及PV器件的寿命。在目前的研究中，三维多滑移晶体塑性模型和专门有限元制剂用于调查在Si衬底上InGaN生长。该制剂是基于占火和内应力为不同的加工条件和显微组织的结果。此外，该制剂被用于研究最近开发的技术，嵌入式空隙方法（EVA），其可以被用于地址二者缺陷的高密度和裂化/ Si上InGaN生长的弯曲。当前的工作奠定了在MJ-PV设备更广泛地使用硅的基础。

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