• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Next-Generation Spectroscopic Technologies X >Raman Micro-Spectroscopy as a non-destructive key Analysis Tool in Current Power Semiconductor Manufacturing
【24h】

Raman Micro-Spectroscopy as a non-destructive key Analysis Tool in Current Power Semiconductor Manufacturing

机译：拉曼微光谱作为当前功率半导体制造中的非破坏性关键分析工具

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

There is a strong commercial incentive for characterizing power semiconductor devices during manufacture non-destructively. One area of concern are the stresses in the material introduced during manufacture by processes such as wafer thinning and chip separation. Raman spectroscopy can be used to measure stress in different semiconductor materials directly, non-destructively and quantitatively. Here, we describe Raman measurements on two semiconductor materials: silicon and silicon carbide. Measurements of silicon carbide are made on silicon carbide wafers; stress and material analyses of silicon are performed on: (i.) silicon wafers that had undergone different wafer thinning methods and (ii) along die sidewalls formed by mechanical and laser dicing. Our measurements demonstrate that micro-Raman spectroscopy is a feasible method for both measuring stress in thin wafers and for optimizing the thin wafer processes.
机译：在非破坏性制造期间，存在强大的商业激励，用于在制造期间表征功率半导体器件。一个关注的领域是通过诸如晶片变薄和芯片分离的工艺制造期间引入的材料中的应力。拉曼光谱可用于直接，非破坏性和定量地测量不同半导体材料的应力。在这里，我们描述了两个半导体材料的拉曼测量：硅和碳化硅。碳化硅的测量是在碳化硅晶片上制造的;硅的应力和物质分析是关于：（i。）硅晶片，其经过不同的晶片稀释方法和（ii），沿着通过机械和激光切割形成的模具侧壁。我们的测量表明，微拉曼光谱是用于薄晶片中的测量应力并优化薄晶片工艺的可行方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号