Continuous wave and modulation performance of 1550 nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

机译：1550nm频段晶圆融合VCSELS的连续波和调制性能，具有基于MBE-生长的基于INP的有源区和基于GAAS的DBRS

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We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current < 2.5 mA and output optical power > 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value- reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of ~ 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)~(1/2). Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

机译：我们在晶圆融合Ingaas-InP / Algaas-GaAs 1550nm垂直腔表面发射激光器（Vcsels）上的第一次报告，其中包含inalgaas / InP MQW活动区域，其具有夹在顶部和底部未掺杂的Algaas之间的重新种植隧道结。 / GaAs分布式Bragg反射器（DBR）全部由分子束外延生长。基于INP的有源区包括七个压缩紧张的量子阱（2.8nm），优化以提供高差异增益。具有该有源区的装置演示了激光阈值电流<2.5 mA，输出光功率> 2 MW在10-70°C的温度范围内。壁插效率（WPE）值达到20％。激光光谱显示单模CW操作，具有纵向侧模抑制比（SMSR）高达45 dB的> 2 MW输出功率。小的信号调制响应测量显示在10 mA的泵电流下显示3dB调制带宽，D-系数值为3 GHz /（mA）〜（1/2）。证明了30 GB / s标准NRZ的睁眼图。实现CW和调制性能是足够的，用于家庭（FTTH）应用程序的光纤需要非常大的低成本激光器。

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《Conference on vertical-Cavity surface-emitting lasers XXI》|2017年|v. p.|共6页
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A. V. Babichev; L. Ya. Karachinsky; I.I. Novikov; A. G. Gladyshev; S. Mikhailov; V. Iakovlev; A. Sirbu; G. Stepniak; L. Chorchos; J.P. Turkiewicz; M. Agustin; N. N. Ledentsov; K. O. Voropaev; A.S. Ionov; A. Yu. Egorov;
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中图分类激光技术、微波激射技术;
关键词
semiconductor laser; VCSEL; wafer fusion; high-speed data transmission;

机译：半导体激光器;VCSEL;晶圆融合;高速数据传输;

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专利

1. Efficient Modulation of InP-Based 1.3-(mu)m VCSELs With AsSb-Based DBRs [J] . D. Feezell, L. A. Johansson, D. A. Buell, IEEE Photonics Technology Letters . 2005,第11期

机译：具有基于AsSb的DBR的基于InP的1.3μmVCSEL的高效调制
2. 6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application [J] . Andrey V. Babichev, Leonid Ya. Karachinsky, Innokenty I. Novikov, IEEE Journal of Quantum Electronics . 2017,第6期

机译：用于DWDM应用的6mW单模高速1550nm晶圆融合VCSEL
3. 1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs [J] . A. Syrbu, A. Mircea, A. Mereuta, IEEE Photonics Technology Letters . 2004,第5期

机译：晶圆融合的1550nm VCSEL的1.5mW单模工作
4. Continuous wave and modulation performance of 1550 nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs [C] . A. V. Babichev, L. Ya. Karachinsky, I.I. Novikov, Vertical-Cavity surface-emitting lasers XXI . 2017

机译：具有MBE生长的基于InP的有源区和基于GaAs的DBR的1550 nm波段晶片融合VCSEL的连续波和调制性能
5. Highly-Strained P-type Modulation Doped Active Regions for High-Speed VCSELs. [D] . Zheng, Yan. 2012

机译：高速VCSEL的高应变P型调制掺杂有源区。
6. Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top [O] . Samiha Ishrat Islam, Arnob Islam, Saiful Islam 2014

机译：集成双波长VCSEL底部使用电泵浦的GaInAs / AlGaAsAs 980 nm腔顶部使用光泵浦的GaInAs / AlGaInAs 1550 nm腔
7. High Speed VCSEL Transmission at 1310 nm and 1550 nm Transmission Wavelengths [O] . Henry Chepkoiwo Cherutoi 2017

机译：高速VCSEL传输，1310 nm和1550nm传输波长
8. Thermal Lensing in Ocular Media Exposed to Continuous Wave Near- Infrared Radiation: the 1150-1350-nm Region [R] . Vincelette, R. L., Welch, A. J., Thomas, R. J., 2008

机译：暴露于连续波近红外辐射的眼部介质中的热透射：1150-1350nm区域

Continuous wave and modulation performance of 1550 nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

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