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首页> 外文会议>International Conference on Advances in Materials, Machinery, Electrical Engineering >Study of Molybdenum Trioxide as a P-Type Dopant in Organic Semiconductors: The Influence of Density of Gap States on Their N-/P-Type Characteristics
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Study of Molybdenum Trioxide as a P-Type Dopant in Organic Semiconductors: The Influence of Density of Gap States on Their N-/P-Type Characteristics

机译：三氧化钼作为有机半导体中的p型掺杂剂的研究：间隙状态密度对其N- / p型特性的影响

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We studied the mechanism of original n- and p-type "intrinsic" organic films 8-Hydroxyquinoline aluminum (Alq_3) and N, N'-bis-l-naphthyl-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB) via using molybdenum trioxide (MoO_3) as a p-type dopant. It is found that the conductivities extracted from "holes-only" devices both for Alq_3 and NPB films are improved as a function of doping molar ratio (MR) of MoO_3. However, the differences of change of conductivities in NPB films and Alq_3 films after doping can be found, where (1) a rapid increase of conductivity in Alq_3 with slope S>1 is shown in the entire MR range; (2) in NPB films, the conductivity changes with a slope of S>1 can be found in the low doping region (MR<～0.04) and a slope of ～1 can be found with MR>～0.04. According to these observation, we proposed that different distributions of occupied and unoccupied DOGS in energy gap of organic films is the origin of"intrinsic" n-/p-type organic films, and therefore can be passivated differently via MoO_3. These findings suggest the effective way for improving free carriers concentrations by reducing DOGS in organic films.
机译：我们研究了原始N-和P型“本质”有机薄膜8-羟基喹啉铝（ALQ_3）和N，N'-BIS-L-Naphthyl-N，N'-二苯基-1,1'-联苯 - 的机理4,4'-二胺（NPB）通过使用三氧化钼（Moo_3）作为p型掺杂剂。结果发现，从“孔”膜中提取的导电性，用于ALQ_3和NPB膜，作为MOO_3的掺杂摩尔比（MR）的函数改善。然而，可以发现NPB膜和Alq_3膜在掺杂后的导电膜变化的差异，其中（1）在整个MR范围内显示了具有斜率S> 1的ALQ_3中的导电性的快速增加; （2）在NPB薄膜中，可以在低掺杂区（MR <〜0.04）中发现S> 1斜率的电导率变化，并且可以使用MR>〜0.04的斜率。根据这些观察，我们提出了有机薄膜的能隙中占用和未占用的狗的不同分布是“内在”n-/ p型有机膜的起源，因此可以通过Moo_3钝化。这些研究结果表明，通过在有机薄膜中还原狗改善自由载体浓度的有效方法。

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