首页> 外文会议>International Conference on Electronic Devices, Systems, and Applications >Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH SensorsDAimi Bazilah RosliDNANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia.

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Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH SensorsDAimi Bazilah RosliDNANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia.

机译：EGFET PH传感沉积ZnO纳米结构的退火温度依赖性EGFET pH传感器沉积 Aimi Bazilah Roslid Nano-Electronal Center，电气工程学院，Universiti Teknologi Mara，40450 Shah Alam，Selangor，Malaysia。

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Zinc Oxide (ZnO) nanostructures were deposited using chemical bath deposition (CBD) technique in water bath at 95 °C for 4 h. Post-deposition heat treatment in air ambient at various temperature ranging from 200-600 °C for 30 min was applied in order to enhance the electrical properties of ZnO nanostructures as the sensing membrane of extended-gate field effect transistor (EGFET) pH sensor. The as-deposited sample was prepared for comparison. The samples were characterized in terms of physical and sensing properties. FESEM images showed that scattered ZnO nanorods were formed for the as-deposited sample, and the morphology of the ZnO nanorods changed to ZnO nanoflowers when the heat treatment was applied from 200-600 °C. For sensing properties, the samples heated at 300 °C showed the higher sensitivity which was 39.9 mV/pH with the linearity of 0.9792. The sensing properties was increased with the increasing annealing treatment temperature up to 300°C before decreased drastically.

机译：在95℃下使用化学浴沉积（CBD）技术在水浴中沉积氧化锌（ZnO）纳米结构4小时。在各种温度下的空气环境中的沉积热处理在200-600℃的各种温度下施加30分钟，以增强ZnO纳米结构的电性能作为延伸栅极场效应晶体管（EGFET）pH传感器的传感膜。制备沉积的样品进行比较。在物理和感测性质方面表征样品。 FeSEM图像显示，为沉积的样品形成散射的ZnO纳米棒，当施加热处理到200-600℃时，ZnO纳米棒的形态变为ZnO纳米射线。对于感测性质，在300℃下加热的样品显示出较高的灵敏度，其具有0.9792的线性度为39.9mV / pH。在急剧下降之前，随着退火处理温度的增加，感测性能提高了600℃。

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《International Conference on Electronic Devices, Systems, and Applications》|2018年|141 p.|共7页
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Zaiki Awang; Shafinaz Sobihana Shariffudin;
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中图分类工程材料学;
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1. Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH SensorsDAimi Bazilah RosliDNANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia. [C] . Zaiki Awang, Shafinaz Sobihana Shariffudin International Conference on Electronic Devices, Systems, and Applications . 2018

机译：EGFET PH传感沉积ZnO纳米结构的退火温度依赖性EGFET pH传感器沉积 Aimi Bazilah Roslid Nano-Electronal Center，电气工程学院，Universiti Teknologi Mara，40450 Shah Alam，Selangor，Malaysia。

Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH SensorsDAimi Bazilah RosliDNANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia.

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