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首页> 外文会议>International Conference on Materials Engineering and Science >Sensitivity Performance of Single Wall Carbon Nanotubes Gas Sensor on Silicon and Porous Silicon
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Sensitivity Performance of Single Wall Carbon Nanotubes Gas Sensor on Silicon and Porous Silicon

机译：单壁碳纳米管气体传感器在硅和多孔硅的敏感性性能

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Pure single walled carbon nanotubes (pure-SWCNTs) and Functionalized single walled nanotubes (F-SSWCNTs) have been utilized to the manufactured nitrogen dioxide gas sensor. CNTs films have been deposited on (n-type) silicon and porous silicon substrate by drop casting method. A porous silicon layer (PS) was prepared via electrochemical etching. The applied current density was 20 mA / cm~2, and the typical electrochemical-etching time was chosen to be about 20 minutes. Upon exposure to fixed test gas mixing ratio (air: gas) NO2 at different operating temperatures, the sensitivity response results show that Pure single walled carbon nanotubes and Functionalized single walled nanotubes deposited on porous silicon have better performances than that deposited on silicon. At RT the F-SWCNTs/Ps sensitivity reaches to 36%, the response and recovery time is about lis and 26 s, whereas for SWCNTs/Ps the sensitivity 13.5%, the response and recovery time is about 13 s and 24 s.
机译：纯单壁碳纳米管（纯-WCNTS）和官能化的单壁纳米管（F-SSWCNT）已被用于制造的氮二氧化氮气体传感器。通过下降铸造方法沉积在（n型）硅和多孔硅衬底上沉积了CNT薄膜。通过电化学蚀刻制备多孔硅层（PS）。所施加的电流密度为20mA / cm〜2，选择典型的电化学蚀刻时间为约20分钟。在暴露于不同工作温度下的固定试验气体混合比（空气：气体）NO2时，敏感性响应结果表明，沉积在多孔硅上的纯单壁碳纳米管和官能化单壁纳米管具有比硅沉积在硅上的性能更好。在室温下，F-SWCNT / PS灵敏度达到36％，响应和恢复时间是关于LIS和26秒，而SWCNT / PS的灵敏度为13.5％，响应和恢复时间约为13 s和24秒。

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