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首页> 外文会议>Malaysia-Japan International Conference on Nanoscience, Nanotechnology and Nanoengineering >Physical and Electrical Properties of Nano-Structured Sn-doped Zinc Oxide Thin Film at Different Sn Doping Concentrations
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Physical and Electrical Properties of Nano-Structured Sn-doped Zinc Oxide Thin Film at Different Sn Doping Concentrations

机译：不同SN掺杂浓度下纳米结构Sn掺杂氧化锌薄膜的物理和电性能

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In this paper, the nano-structured Sn-doped ZnO thin films were prepared by Spin coating technique on glass substrates at various Sn doping of 0, 1, 1.5, 1, 2.0 and 3 at.%. The structural, optical and electrical properties were characterized by field emission scanning electron microscopy (FESEM), X-Ray Diffraction (XRD), UV-Vis-NIR and I-V measurement, respectively. The surface morphology reveals that the average particle size of nano-structured Sn-doped ZnO thin films decreased as the Sn concentrations increased. The results show all films are transparent in the visible region with average transmittance above 88%. Meanwhile, the resistivity of Sn-soped ZnO thin films was decreased when the Sn concentrations increased. Among all of Sn-doped ZnO thin films, the thin films doped with 2 at.% shows the optimum properties of average resistivity and transmittance were 7.7 × 10~2 Ω·Cm and 96%, respectively.
机译：在本文中，通过在0,1,1.5,1,2.0和3的各种Sn掺杂的玻璃基板上通过旋涂技术制备纳米结构的Sn掺杂的ZnO薄膜。％。通过现场发射扫描电子显微镜（FESEM），X射线衍射（XRD），UV-Vis-Nir和I-V测量的特征在于结构，光学和电性能。表面形态表明，随着Sn浓度的增加，纳米结构的Sn掺杂的ZnO薄膜的平均粒度降低。结果显示所有薄膜在可见区域中透明，平均透射率高于88％。同时，当Sn浓度增加时，Sn-Soped ZnO薄膜的电阻率降低。在所有Sn掺杂的ZnO薄膜中，掺杂有2at的薄膜。％分别显示平均电阻率和透射率的最佳特性分别为7.7×10〜2Ω·cm和96％。

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