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首页> 外文会议>ICTAP 2012 >Preliminary Study of CdTe and CdTe:Cu Thin Films Nanostructures Deposited by using DC Magnetron Sputtering
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Preliminary Study of CdTe and CdTe:Cu Thin Films Nanostructures Deposited by using DC Magnetron Sputtering

机译：CDTE和CDTE的初步研究：使用DC磁控溅射沉积Cu薄膜纳米结构

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摘要

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.
机译：报道了CDTE和CDTE的生长和性能：通过使用DC磁控溅射沉积的Cu薄膜纳米膜。扫描电子显微镜（SEM）用于观察薄膜的表面形态。在250℃和14W的生长条件下，CdTe薄膜尚未沉积。然而，在325℃和43W的生长温度和等离子体功率下，CDTE和CDTE：Cu（2％）沉积在基材上。在这种情况下，膜的形态表明膜具有晶粒状纳米结构。大约200nm的粒度直径开始出现在薄膜的顶部。能量分散X射线光谱（EDX）用于研究沉积的Cu掺杂CdTe膜的化学元素。发现膜沉积的膜由Cd，Te和Cu元素组成。 XRD用于研究沉积的薄膜的半最大（FWHM）值下的全宽。结果表明，CDTE：Cu（2％）薄膜具有比CdTe薄膜更好的晶体特性。 UV-Vis光谱仪用于研究沉积的薄膜的光学性质。透射谱表明CDTE：Cu（2％）膜的透射率低于CdTe膜。发现CDTE和CDTE的带隙能量和CDTE：Cu（2％）薄膜为约1.48eV。

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