首页> 外文会议>International School and Conference "Saint Petersburg OPEN" >Low-dimensional heterostructures obtaining from an intelligent material and carbon material on a silicon
【24h】

Low-dimensional heterostructures obtaining from an intelligent material and carbon material on a silicon

机译:低维异质结构从硅上获得智能材料和碳材料

获取原文

摘要

The results of the study of the technological regimes of the formation of a microcantilever beam of layered heterostructures based on the integration of smart material and silicon carbide are presented. Layers of silicon dioxide (SiO_2), silicon nitride, silicon carbide, and platinum (lower electrode) are successfully formed on a silicon substrate. The results of an experimental study of the Pt / PZT / Pt / SiC heterostructures parameters confirmed the technological compatibility of the layers and the promise of using these structures in sensors of dynamic deformation when creating new generation sensors, including those operating in heavy rocket conditions of space technology.
机译:介绍了基于智能材料和碳化硅的整合的层状异质结构形成的技术制定的研究结果。 在硅衬底上成功地形成二氧化硅层(SiO_2),氮化硅,碳化硅和铂(下电极)。 PT / PZT / PT / SIC异质结构参数的实验研究结果证实了层的技术兼容性以及在创造新一代传感器时使用动态变形传感器中的这些结构的承诺,包括在重型火箭条件下运行的那些 太空技术。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号