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首页> 外文会议>International Conference on Circuits, Systems and Simulation >A Millimeter Wave Class-F VCO with Third Harmonic Enhancement in 40nm CMOS
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A Millimeter Wave Class-F VCO with Third Harmonic Enhancement in 40nm CMOS

机译：一个毫米波Class-F VCO，40nm CMOS中的三次谐波增强

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In this paper, the proposed millimeter-wave voltage controlled oscillator (VCO) is based on Class-F oscillator and adopts the design of multi-peak transformer to enhance the third harmonic so as to obtain higher frequency and lower phase noise. A high frequency millimeter wave VCO is realized by the design of a low frequency resonator. As a result, the VCO has lower phase noise and lower power consumption while obtaining wider frequency tuning range than traditional mm-Wave VCOs. In addition, a broadband buffer with a low-km transformer which can suppress the first-harmonic and extract the third-harmonic is proposed. Simulated results show that the proposed VCO exhibits phase noise of -93.6~-95.1dBc/Hz at 1 MHz offset at 72.8~90.1 GHz, and the DC power consumption of the VCO core is only 10.8mW at the supply voltage of 0.9V.
机译：本文提出的毫米波电压控制振荡器（VCO）基于F类振荡器，采用多峰变压器的设计来增强三次谐波，从而获得更高的频率和更低的相位噪声。 通过低频谐振器的设计实现了高频毫米波VCO。 结果，VCO具有较低的相位噪声和较低的功耗，同时获得比传统MM波VCO更宽的频率调谐范围。 此外，具有低k的宽带缓冲区 m 提出了可以抑制第一次谐波和提取第三次谐波的变压器。 模拟结果表明，在72.8〜90.1GHz的1 MHz偏移中，所提出的VCO展示了-93.6〜-95.1dBc / Hz的阶段噪声，VCO芯的直流功耗仅为10.8mW，电源电压为0.9V。

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