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首页> 外文会议>Conference on Advanced Etch Technology and Process Integration for Nanopatterning >Novel bottom-up organic mandrel growth to enable organic mandrel EUV SADP for sub 5-nm node technologies
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Novel bottom-up organic mandrel growth to enable organic mandrel EUV SADP for sub 5-nm node technologies

机译：新颖的自下而上有机心轴增长，使有机心轴EUV SADP用于Sub 5-NM节点技术

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As EUV direct patterning begins to hit its resolution limit, the need for EUV self-aligned double patterning (SADP) has arisen in order to reach sub-30 nm pitch. Currently, EUV resists suffer from several shortcomings, both in terms of roughness and resist budget. These constraints means using it directly as a mandrel material, as previously done for immersion lithography SADP is nearly impossible. Consequently, standard EUV SADP flows involve the transfer of the resist through a lithography stack and into a hard mandrel material, such as silicon nitride or amorphous silicon.1 Achieving line edge roughness (LER) and line width roughness (LWR) targets for an EUV SADP hard mandrel is significantly more challenging than for EUV direct print since the etch process needs to target a post etch CD of about half that of the lithographic CD. This aggressive shrink requirement usually involves degradation in roughness driven by high aspect ratios. To circumvent these issues, we have developed a new bottom up organic mandrel growth process, whereby the EUV resist can be grown to a height compatible with a resist mandrel SADP flow, while the roughness is improved and the critical dimension is controlled. This bottom up mandrel growth process is performed in an etch chamber and can therefore be easily coupled with other process steps. The mandrel height and critical dimensions can be easily tuned from the incoming lithography by changing the deposition and trim step times of the process. We have shown that this bottom-up grown mandrel can withstand typical ALD spacer process deposition. After spacer open, the organic material can be easily removed through an in-situ ash process before opening the underlayer. This integration will allow for the removal of the organic planarizing layer in the lithography stack, reducing the stack complexity, while also eliminating one of the major contributors to wiggling in the typical hard mandrel patterning scheme. In this paper, the performance of this new integration scheme was benchmarked against a more standard SADP flow. The roughness performance post mandrel formation and post spacer deposition for this new scheme is significantly improved over our standard EUV SADP baseline using a standard EUV SADP flow.
机译：由于EUV直接图案开始达到其分辨率限制，因此出现了对EUV自对准双重图案（SADP）的需求，以便到达Sub-30 NM间距。目前，EUV抵抗遭受了几种缺点，无论是粗糙和抵抗预算。这些约束意味着直接使用它作为心轴材料，如前所述用于浸入光刻Sadp几乎不可能。因此，标准EUV SADP流动涉及通过光刻堆叠将抗蚀剂转移到硬心轴材料，例如氮化硅或无定形硅.1实现了EUV的线边缘粗糙度（LER）和线宽粗糙度（LWR）靶标。 SADP硬心轴比EUV直接印刷更具挑战性，因为蚀刻工艺需要瞄准蚀刻CD的后蚀刻CD约一半。这种侵略性收缩要求通常涉及由高纵横比驱动的粗糙度降低。为了规避这些问题，我们开发了一种新的自下而上的有机心轴生长过程，从而可以将EUV抗蚀剂生长到与抗蚀剂心轴Sadp流量兼容的高度，而粗糙度得到改善，并且控制临界尺寸。该底部上升心轴生长过程在蚀刻室中进行，因此可以容易地与其他工艺步骤耦合。通过改变过程的沉积和修整步骤时间，可以通过进入的光刻容易地调谐心轴高度和临界尺寸。我们已经表明，这种自下而上的生长的心轴可以承受典型的ALD间隔工艺沉积。在垫片开放后，在打开底层之前，可以通过原位灰分过程容易地除去有机材料。该积分将允许在光刻堆叠中去除有机平面化层，降低堆叠复杂性，同时还消除了在典型的硬心轴图案化方案中摆动的主要贡献者之一。在本文中，这种新的集成方案的性能与更标准的SADP流程有基准测试。使用标准EUV SADP流程，在我们的标准EUV SADP基线上显着改善了Mandrel形成和Post Spacer沉积的粗糙度性能和柱间隔沉积。

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