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首页> 外文会议>Conference on Metrology, Inspection, and Process Control for Semiconductor Manufacturing >X-ray Critical Dimension Metrology Solution for High Aspect Ratio Semiconductor Structures
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X-ray Critical Dimension Metrology Solution for High Aspect Ratio Semiconductor Structures

机译：高纵横比半导体结构的X射线关键尺寸计量解决方案

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摘要

We have developed a novel in-line solution for the characterization and metrology of high-aspect ratio (HAR) semiconductor structures using transmission small-angle X-ray scattering (SAXS). The solution consists of the Sirius-XCD® tool, NanoDiffract for XCD (NDX) analysis software and high-performance computing infrastructure. The solution provides quantitative information on the orientation and shape of HAR structures, such as 3D NAND channel holes and DRAM capacitors, and can be used for development and control of the critical etch processes used in the formation of such structures. The tool has been designed to minimize expensive cleanroom space without sacrificing performance with typical measurements taking only a few minutes per site. The analysis is done using real-time regression in parallel to the measurements to maximize the throughput of the solution. We will illustrate the key features of the solution using data from a HAR reference wafer and provide results for hole shape and tilt across the wafer together with complimentary data from other techniques. We will also discuss future opportunities for both stand-alone XCD applications and possibilities of XCD-OCD synergies, including hybrid, metrology in solving complex high-aspect ratio (HAR) and other applications.
机译：我们已经开发了一种新的在线解决方案，用于使用传输小角X射线散射（SAXS）的高纵横比（HAR）半导体结构的表征和计量。该解决方案由Sirius-XCD®工具组成，XCD（NDX）分析软件和高性能计算基础设施的纳米二污染。该解决方案提供有关HAR结构的方向和形状的定量信息，例如3D NAND沟道孔和DRAM电容器，并且可用于开发和控制在形成这种结构的形成中使用的临界蚀刻工艺。该工具旨在最大限度地减少昂贵的洁净室空间，而不会牺牲性能，典型测量仅需几分钟的时间。分析是使用与测量的实时回归进行的，以最大化解决方案的吞吐量。我们将使用来自HAR参考晶片的数据来说明解决方案的关键特征，并提供孔形状的结果，并与来自其他技术的互补数据一起倾斜晶片。我们还将讨论未来的独立XCD应用程序以及XCD-OCD协同效应的可能性，包括混合，在解决复杂的高纵横比（HAR）和其他应用程序中的杂种，计量。

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