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首页> 外文会议>Epitaxial Growth of Functional Oxides Symposium >GROWTH KINETICS DURING PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS
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GROWTH KINETICS DURING PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS

机译：复合氧化物薄膜脉冲激光沉积期间的生长动力学

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The application of oxide thin films in electronic devices, relying on multilayer technology, requires (atomically) smooth film surfaces and interfaces. Understanding of the different mechanisms affecting the growth mode is, therefore, necessary to control the surface morphology during thin film growth. Two independent processes, i.e., nucleation and growth of islands, play an important role during vapour-phase epitaxial growth on an atomically flat surface. Here, nucleation causes the formation of surface steps and subsequent growth causes the lateral movement of these steps. Both processes affect the final surface morphology and are determined by kinetics, since they take place far from thermodynamic equilibrium. In this paper, the applicability of reflection high-energy electron diffraction (RHEED) to determine the kinetic parameters at growth conditions of complex oxides during pulsed laser deposition (PLD) is demonstrated. A two-dimensional growth model will be presented and applied to the homoepitaxial growth of SrTiO3 as a model system.
机译：氧化物薄膜在电子设备中的应用，依赖于多层技术，需要（原子上）平滑的薄膜表面和界面。因此，理解影响生长模式的不同机制是控制薄膜生长期间的表面形态所必需的。在原子平坦表面上的气相外延生长期间，两个独立的方法，即核心和生长，在气相外延生长期间发挥着重要作用。这里，成核导致表面步骤的形成，随后的生长导致这些步骤的横向运动。这两个过程都影响了最终表面形态，并且由动力学决定，因为它们远离热力学平衡。本文说明了反射高能电子衍射（RHEED）来确定脉冲激光沉积（PLD）期间复合氧化物生长条件下的动力学参数的适用性。将呈现二维生长模型，并应用于SRTIO3的同性端生长作为模型系统。

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